| 发明名称 |
Method for fabricating semiconductor device |
| 摘要 |
A fluorine-containing organic film having a relative dielectric constant of 4 or less is deposited on a semiconductor substrate using a material gas containing C5F8, C3F6, or C4F6 as a main component.
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| 申请公布号 |
US2004005789(A1) |
申请公布日期 |
2004.01.08 |
| 申请号 |
US20030600606 |
申请日期 |
2003.06.23 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
JIWARI NOBUHIRO;IMAI SHINICHI |
| 分类号 |
H01L21/302;B05D5/08;B05D7/24;C23C16/26;C23C16/30;H01L21/28;H01L21/3065;H01L21/31;H01L21/311;H01L21/312;H01L21/3213;H01L21/768;H01L23/522;(IPC1-7):H01L21/476;H01L21/469 |
主分类号 |
H01L21/302 |
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