SUBSTRATE TREATING APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A supporting portion (28) for receiving a wafer (1) is convexly formed in the middle of a receiving part (26) of each holding groove (25) of a boat (21). At the time of boat loading of the boat (21), in which wafers (1) respectively received by the supporting portions (28) are aligned, from a stand-by chamber (33) to a treatment chamber (14), the pressures in the stand-by chamber (33) and the treatment chamber (14) are set at not less than 200 Pa and not more than 3000 Pa. By holding the wafer lifted from the receiving part with use of the supporting portion, particles of coating, which may be separated from the wafer due to a large friction force generated between the supporting portion and the supported area of the wafer under a reduced pressure, are received by the receiving parts and prevented from adhering to the surface of the wafer right below the receiving part in which an IC is to be manufactured.