| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve luminous intensity of a group III nitride semiconductor light emitting element that emits light of an ultraviolet region. <P>SOLUTION: A light emitting element that consists of the group III nitride semiconductor which has a light emitting layer 4 that emits light of violet or the ultraviolet region. In the emitting device, aluminum composition ratio of AlGaN in a p-cladding layer 5 which is formed on the light emitting layer 4 was set to 8% or more and 30% or less, and the thickness of the p-cladding layer 5 was set to 70nm or less. Further, a p-contact layer 6 formed on the p-cladding layer 5 was formed thinner, an n-cladding layer 3 formed under the light emitting layer 4 was formed by AlGaN, and a reflective film 10 was attached on a rear surface of a sapphire layer in a substrate. Thus, the luminous intensity of light of violet and the ultraviolet region improved. <P>COPYRIGHT: (C)2004,JPO |
