CVD APPARATUS AND METHOD FOR CLEANING CVD APPARATUS WITH IT

摘要

PROBLEM TO BE SOLVED: To provide a method for cleaning a CVD apparatus which efficiently removes by-products such as Si3N4and SiO2adhering and depositing on surfaces of inner walls of a reaction chamber and electrodes in a film forming step, exhausts extremely little amount of cleaning gas, gives little influence on the environment such as global warming, and reduces a cost.

SOLUTION: The CVD apparatus for forming a deposition film on the surface of a substrate arranged in a reaction chamber by supplying a reactant gas into the reaction chamber, has a route for refluxing exhaust gas flowing to the reaction chamber from the downstream of a pump, arranged in an exhaust route for discharging the exhaust gas from the inside of the reaction chamber through the pump.

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