| 摘要 |
PROBLEM TO BE SOLVED: To provide a device for stable film forming processing, which reduces down time caused by maintenance. SOLUTION: A single wafer processing CVD device is provided with: (a) a reaction chamber consisting of, (i) a susceptor which is disposed in the reaction chamber and provided with at least one gas outlet for flowing gas, at the time of film forming, into the reaction chamber through the rear and the outer periphery of a substrate; (ii) a shower head; (iii) an exhaust duct which is located in the neighborhood around the shower head, being annularly shaped along the inner wall surface of the reaction chamber; and (iv) an annular separating plate which is coaxial with the exhaust duct and disposed so as to form a small gap between itself and the bottom surface of the exhaust duct: and (b) a temperature control device for controlling the temperature of the shower head at a given level. COPYRIGHT: (C)2004,JPO
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