| 摘要 |
PROBLEM TO BE SOLVED: To obtain a structure wherein of moisture is prevented from entering a thin film resistor via an interlayer insulating film. SOLUTION: A LOCOS film 2, a BPSG film 3 and a silicon nitride film 4 are formed on a semiconductor substrate 1, TEOS films 5a, 5b are formed, and a CrSi film 6 is formed as the thick film resistor. After that, a TEOS film 5c is formed, aluminum wiring 8 of a first layer is formed, and a silicon nitride film 9 is formed on an upper surface of the wiring 8 in order to prevent permeation of water content. After that, the interlayer insulating film 10 in which an SOG film 10b is interposed in a middle part is formed. Moisture content of the SOG film 10b can be obstructed by the silicon nitride film 9, and adverse influence which is caused by the moisture on the CrSi film 6 can be reduced to a minimum. COPYRIGHT: (C)2004,JPO
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