| 摘要 |
Disclosed is a device (6) and a method for the production of chlorotrifluoride, wherein a high-density plasma (105) is produced inside a plasma reactor (10) with the aid of plasma production means (110, 120, 130, 150, 155, 160, 170, 180) and a first gas and a second gas are fed to the plasma reactor (100) using gas supply means (21, 22, 25, 26), said gases reacting with each other under the effect of the high-density plasma (105) inside the plasma reactor in order to form chlorotrifluoride. A gas outlet (20) is also provided in order to evacuate the chlorotrifluoride from the plasma reactor (100). The invention also relates to a system (5) for etching semiconductor substrates (30), especially silicon wafers, using an upstream device (6) of the above variety. The system (5) comprises a process chamber (10) which is connected to the plasma reactor (100) via the gas outlet (20). The semiconductor substrate (30) is arranged in the process chamber (10) and is exposed to the gaseous chlorotrifluoride produced by the device (5). |
