SINGLE CRYSTAL SILICON MEMBRANES FOR MICROELECTROMECHANICAL APPLICATIONS

摘要

A method for forming a MEMS devices and related systems includes the steps of providing a single crystal substrate (320), etching a plurality of periodically placed holes (303) in the substrate, and annealing the substrate in a reducing ambient at a temperature its melting point. The holes coalesce into at least one cavity layer (318) and form at least one single crystal membrane layer (323) . The membrane layer provides a dislocation density of no more 10<6> disclocations/cm<2>. At least one MEMS structure including at least one movable portion is formed on the membrane layer. Microelectronic devices can also be formed on the single crystal substrate. The method can also be used to form MEMS devices having stacked membrane layers (323, 324).