REFLECTIVE MASK BLANK, REFLECTIVE MASK, METHOD FOR MANUFACTURING THE SAME AND METHOD FOR MANUFACTURING SEMICONDUCTOR

摘要

PROBLEM TO BE SOLVED: To provide a reflective mask and a mask blank which enable correct and prompt inspection of mask patterns.

SOLUTION: The mask blank consists of a substrate 11, a reflector layer 12 for reflecting exposure light of short wavelength including extreme ultraviolet wavelength, a buffer layer 13 for protecting the reflector layer 12 in forming mask patterns, and an absorber layer 16 for absorbing exposure light. These elements are stacked in this order on the substrate 11. The absorber layer 16 has a two-layer structure which is provided with an absorber layer 14 as a lower layer consisting of an absorber for absorbing exposure light of short wavelength including extreme ultraviolet wavelength, and a low reflector layer 15 as an upper layer consisting of an absorber for absorbing inspection light for use in mask pattern inspection. The reflective mask 2 is obtained by forming the absorber layer 16 of the mask blank into patterns.

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