| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for improving integration of a semiconductor device by multilayering and micronizing the structure of a GAA (Gate All Around) transistor in the semiconductor device provided with the GAA transistor. SOLUTION: The manufacturing method comprises: a first process of forming a dummy pattern 8 on an insulation film 2 formed on a substrate 1; a second process of forming a channel member 3 on the insulation film and the dummy pattern by a thin film forming method; a third process of removing the dummy member and providing a gap 10 between the channel member and the insulation film; and a fourth process of forming a thin film 6 as the control electrode of a transistor for a channel on both sides of the channel member at the channel member and the gap so as to cover the channel member. There is a plurality of the channel members, and the widths of the channel members are roughly equal. COPYRIGHT: (C)2004,JPO
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