发明名称 SUBSTRATE PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To perform uniform etching and, in its turn, uniform cleaning inside a reaction tube by solving the conventional problem about the supply of an etching gas. SOLUTION: In order to set a state in which the discharge from a gas discharging pipe is stopped while a cleaning gas is supplied to the reaction tube from a gas introducing pipe, a first step of removing deposits adhering to the inside of the reaction tube by filling up the pipe with the cleaning gas is performed by stopping the discharge of a gas from the gas discharging pipe or adjusting the discharging amount of the gas to such a degree that the gas has no effect on the flow of the cleaning gas. After the first step, the internal wall of the reaction tube is cleaned by performing a cleaning step of removing the atmosphere filling inside the reaction tube from the gas discharging pipe at least one or more cycles as a second step. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004006620(A) 申请公布日期 2004.01.08
申请号 JP20020366250 申请日期 2002.12.18
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 OKUDA KAZUYUKI;SAKAI MASANORI;KAGAYA TORU
分类号 C23C16/44;H01L21/00;H01L21/205;H01L21/3065;(IPC1-7):H01L21/205;H01L21/306 主分类号 C23C16/44
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