| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which prevents the formation of a nonpermissible notch in a gate during a gate etching process and maintains a trench (a cut portion of a gate footing) in the footing of the gate to the minimum, and also to provide a method of manufacturing a semiconductor which is quite effective to technology at the level of 0.18μm. SOLUTION: A gate structure of a transistor is formed by using a hard mask. The hard mask has a two-layer structure of BARC (lower antireflection layer) on a silicon dioxide. A photoresist layer is formed upon a portion corresponding to the gate. The gate structure is formed by first etching. Removal of the photoresist is followed by second etching, by which the BARC is completely removed. The silicon dioxide can be removed by consecutive wet etching using HF (hydrogen fluoride). COPYRIGHT: (C)2004,JPO
|
