发明名称 Bumping process to increase bump height and to create a more robust bump structure
摘要 A new process is provided which is an extension and improvement of present processing for the creation of a solder bump. After the layers of Under Bump Metal and a layer of solder metal have been created in patterned and etched format and overlying the contact pad, following a conventional processing sequence, a layer of polyimide is deposited. The solder flow is performed using the thickness of the deposited layer of polyimide to control the height of the column underneath the reflown solder.
申请公布号 US2004005771(A1) 申请公布日期 2004.01.08
申请号 US20030613694 申请日期 2003.07.03
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY 发明人 FAN YANG-TUNG;CHU CHENG-YU;FAN FU-JIER;LIN SHIH-JANE;PENG CHIOU-SHIAN;CHEN YEN-MING;LIN KUO-WEI
分类号 H01L21/60;(IPC1-7):H01L21/44 主分类号 H01L21/60
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