发明名称 |
Bumping process to increase bump height and to create a more robust bump structure |
摘要 |
A new process is provided which is an extension and improvement of present processing for the creation of a solder bump. After the layers of Under Bump Metal and a layer of solder metal have been created in patterned and etched format and overlying the contact pad, following a conventional processing sequence, a layer of polyimide is deposited. The solder flow is performed using the thickness of the deposited layer of polyimide to control the height of the column underneath the reflown solder.
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申请公布号 |
US2004005771(A1) |
申请公布日期 |
2004.01.08 |
申请号 |
US20030613694 |
申请日期 |
2003.07.03 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
FAN YANG-TUNG;CHU CHENG-YU;FAN FU-JIER;LIN SHIH-JANE;PENG CHIOU-SHIAN;CHEN YEN-MING;LIN KUO-WEI |
分类号 |
H01L21/60;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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