| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve adhesion between an insulating film and a metallic film formed thereon. <P>SOLUTION: A TFT 43 is formed on an insulating substrate 42, and a photosensitive resin 44 is deposited to cover the TFT 43. A contact hole 66 is formed in the photosensitive resin 44 by exposing the photosensitive resin twice with 1st and 2nd photo masks in which round shading parts are scattered, and also smooth ruggedness is formed in the area outside the TFT 43. Further, a MoN film 45 and a reflection electrode 46 are sequentially deposited on the photosensitive resin 44. In that case, high adhesion of the MoN layer 45 to the photosensitive resin 44 can be obtained and also an etching rate is prevented from decreasing by maintaining N<SB>2</SB>concentration in the MoN film 45 to ≥5 atomic % and ≤30 atomic %. <P>COPYRIGHT: (C)2004,JPO |
