| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which reliability is enhanced by blocking intrusion of movable ions of sodium, or the like, from an insulating substrate or the outside. SOLUTION: The semiconductor device comprises a first silicon nitride film formed on the insulating substrate, a first silicon oxide film formed on the first silicon nitride film, a semiconductor film formed on the first silicon oxide film, a second silicon oxide film formed on the semiconductor film, and a second silicon nitride film formed on the second silicon oxide film. COPYRIGHT: (C)2004,JPO
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