发明名称 ION BEAM PROCESSING DEVICE
摘要 PROBLEM TO BE SOLVED: To provide an ion beam processing device capable of obtaining a large neutralized electron by capturing a large number of ions in a neutralizingcontainer. SOLUTION: An orifice 12a to emit electrons is provided in a metal hollow container 11 having one open end in its longitudinal direction, and a dielectric plate (silica plate) 16 is provided so as to cover the open end. A high frequency coil 17 to generate plasma in the hollow container by producing an induction field of high frequency is disposed on the outer surface of the dielectric plate 16, and a negative bias is applied to the metal hollow container 11 by a bias supply 32. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004006109(A) 申请公布日期 2004.01.08
申请号 JP20020159809 申请日期 2002.05.31
申请人 HITACHI HIGH TECH CORP 发明人 TSUCHIYA KAZUTOSHI;SATO TADASHI;ICHIMURA SATOSHI
分类号 C23F4/00;H01J37/317;H01L21/302;H01L21/3065;(IPC1-7):H01J37/317 主分类号 C23F4/00
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