发明名称 |
STRUCTURE FOR PREVENTING SALICIDE BRIDGING AND METHOD THEREOF |
摘要 |
A semiconductor device having a memory array that includes a plurality of substantially parallel word lines, a plurality of substantially parallel bit lines, wherein each of the plurality of the word lines is substantially perpendicular to each of the plurality of the bit lines, a first dummy word line disposed at a periphery of the memory array, wherein the first dummy word line is substantially parallel to the plurality of word lines and overlaps at least two non-adjacent bit lines.
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申请公布号 |
US2004005758(A1) |
申请公布日期 |
2004.01.08 |
申请号 |
US20020186619 |
申请日期 |
2002.07.02 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
CHANG TSAI-FU;CHU SHIH LIN;YEH CHING PEN |
分类号 |
H01L21/336;H01L21/8239;H01L21/8242;H01L21/8247;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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