| 发明名称 |
Method for Raman imaging of semiconductor materials |
| 摘要 |
An ion implanted semiconductor surface is illuminated with a flood illumination of monochromatic radiation, and an image of the surface is taken using light which has been Raman scattered. The illumination and imaging system are calibrated by flood illuminating a uniformly Raman scattering surface. |
| 申请公布号 |
US2004004715(A1) |
申请公布日期 |
2004.01.08 |
| 申请号 |
US20030610481 |
申请日期 |
2003.06.30 |
| 申请人 |
TUSCHEL DAVID;TREADO PATRICK J.;DEMUTH JOSEPH E. |
发明人 |
TUSCHEL DAVID;TREADO PATRICK J.;DEMUTH JOSEPH E. |
| 分类号 |
C08K9/02;G01B11/25;G01J3/28;G01J3/44;G01J3/447;G01N21/35;G01N21/65;G02B6/32;G02B21/00;G02B21/06;G02B21/36;G06K9/00;G06T5/50;(IPC1-7):G01J3/44 |
主分类号 |
C08K9/02 |
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