发明名称 STACKED SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To protect a second semiconductor device stacked on a first one from heat that is generated by the first semiconductor device. <P>SOLUTION: A sheet-like spacer 15 made of an insulative composite adhesive is stuck to the upper surface of a DPS chip 12 packaged on a substrate 11 by a thermally conductive adhesive 19, and a CCD chip 13 is laminated and fixed via the spacer 15, thus composing a stacked type semiconductor device 10. An air layer 16 is formed between a DPS chip 12 and the CCD chip 13 by the spacer 15. The air layer 16 inhibits the transmission of heat generated by the DSP chip 12 to the CCD chip 13 due to the presence of air having low thermal conductivity. <P>COPYRIGHT: (C)2004,JPO</p>
申请公布号 JP2004006564(A) 申请公布日期 2004.01.08
申请号 JP20020197977 申请日期 2002.07.05
申请人 SHARP CORP 发明人 TOTSUTA YOSHIHISA
分类号 H01L27/14;H01L25/065;H01L25/07;H01L25/18;H04N5/335;H04N5/369;(IPC1-7):H01L25/065 主分类号 H01L27/14
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