NITRIDE GROUP SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a nitride group semiconductor element whereby contact resistance between an electrode and a nitrogen side of a nitride group semiconductor substrate or the like can be reduced.

SOLUTION: The manufacturing method of the nitride group semiconductor element includes steps of etching the rear side (nitrogen side) of an n-type GaN substrate 1 with a wurtzite structure by an RIE (reactive ion etching) method, and then forming an n-side electrode 8 on the rear side (nitrogen side) of the etched n-type GaN substrate 1.

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