| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element capable of high speed operation and exhibiting large current driving power while suppressing variations between the elements. SOLUTION: The semiconductor device has a semiconductor element and a capacitive element connected electrically with the semiconductor element on the same insulating surface wherein the semiconductor element has a first insulating film, a conductive region provided across the first insulating film, and a plurality of channel forming regions connected electrically with the conductive region. The capacitive element comprises a plurality of crystalline semiconductor regions arranged in parallel, a second insulating film covering the plurality of crystalline semiconductor regions, and an interconnection facing the plurality of crystalline semiconductor regions while sandwiching the second insulating film. COPYRIGHT: (C)2004,JPO
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