| 摘要 |
PROBLEM TO BE SOLVED: To provide a radiation detector for imaging array comprising a top gate thin film transistor (TFT). SOLUTION: The radiation detector (18) includes the top gate thin film transistor (28), and the TFT includes a source electrode (50), a drain electrode (52), a gate electrode (66), a primary dielectric layer (59) and a second dielectric layer (62). Extending therethrough of the second dielectric layer is carried out so that a front surface of the primary dielectric layer may be covered. The radiation detector also includes a capacitor (24) having electrodes (53, 68) and dielectric layer of duplicate at least. Dielectric layer (64) of the capacitor is formed in the second dielectric layer and one piece of the TFT. COPYRIGHT: (C)2004,JPO
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