| 摘要 |
PROBLEM TO BE SOLVED: To provide a processing method of a wafer for forming very thin SOI and thick BOX with implantation by a low acceleration voltage, by implanting oxygen ion beams different in energy to the same silicon wafer. SOLUTION: The oxygen ion beams of different energy are implanted to the same wafer, and the SIMOX wafer of SOI and BOX, which have equal thickness, can be manufactured with the acceleration voltage of about half degree by the method. Thus, an implanter can be made inexpensive. COPYRIGHT: (C)2004,JPO
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