| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device having an improved dopant oxide layer. SOLUTION: In the method for manufacturing the semiconductor device, in order to provide a semiconductor substrate (202), to form a dielectrics layer (204) on the semiconductor substrate (202) and to expose part of a surface of the semiconductor substrate (202), a process is contained wherein a trench or a via (206) is formed on the dielectrics layer (204) by etching. The method further contains a process for forming conductor layers (212, 220) in the trench or the via (206) and a process wherein part of the conductor layer (220) is polished and the conductor layers (212, 220) are annealed at a prescribed temperature. The conductor layers (212, 220) contain also dopant. The dopant is diffused practically on upper side surfaces of the conductor layers (212, 220), when the conductor layers (212, 220) are annealed at the prescribed temperature and the dopant is exposed to oxygen, and dopant oxide layers (212a, 220a) are formed. COPYRIGHT: (C)2004,JPO
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