INSULATED GATE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a power MOSFET which is high in speed and is most primarily characterized by having the capability of suppressing switching noise. SOLUTION: For example, the power MOSFET comprises a plurality of p base layers 12 which are selectively formed on the surface of an n-drift layer 11, an n+source layer 13 formed on the surface of each p base layer 12, an n+drain layer 15 formed on the rear face side of the n-drift layer 11, drain electrode 21 connected to the n+drain layer 15, a plurality of source electrodes 22 connected to the p base layers 12 and to the n+source layer 13, a gate electrode 24 formed between the source electrodes 22 via a gate insulation film 23, and a p layer 14 which is selectively formed on the surface of the n-drift layer 11 below the gate electrode 24 while being connected to one of the p base layers 12 and having a lower impurity concentration than the p base layer has. COPYRIGHT: (C)2004,JPO