| 摘要 |
A switching device for integrated circuit applications is disclosed. A first switching device includes a first device between a first voltage supply and a common output, a second device between a second voltage supply and common output, and a common input to control said first and second devices. Said first and second devices are constructed as complementary Gated-FET devices, wherein the conductive path of a Gated-FET comprises a resistive channel of the same dopant type as source and drain regions. A second switching device includes a first device between a first voltage supply and a common output, a second device between a second voltage supply and common output, and a common input to control said first and second devices. The conductive paths of said first and second devices are comprised of a single geometry of a semiconductor material.
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