发明名称 |
Semiconductor device and method of fabricating the same |
摘要 |
An impurity-diffused layer having an extension structure is formed first by implanting Sb ion as an impurity for forming a pocket region; then by implanting N as a diffusion-suppressive substance so as to produce two peaks in the vicinity of the interface with a gate electrode and at an amorphous/crystal interface which serves as an defect interface generated by the impurity in the pocket region; and by carrying out ion implantations for forming an extension region and deep source and drain regions.
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申请公布号 |
US2004004250(A1) |
申请公布日期 |
2004.01.08 |
申请号 |
US20030465823 |
申请日期 |
2003.06.20 |
申请人 |
MOMIYAMA YOUICHI;OKABE KENICHI;SAIKI TAKASHI;FUKUTOME HIDENOBU |
发明人 |
MOMIYAMA YOUICHI;OKABE KENICHI;SAIKI TAKASHI;FUKUTOME HIDENOBU |
分类号 |
H01L21/265;H01L21/336;H01L21/8238;H01L27/092;H01L29/78;(IPC1-7):H01L21/336;H01L29/76 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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