| 摘要 |
A method of manufacturing MOS transistors is disclosed. The method includes a step of depositing a shield layer on a silicon substrate prior to forming source/drain regions. The shield layer is formed to cover a gate electrode and a field oxide layer (or shallow trench isolation) on a silicon substrate with a uniform thickness. Then, the silicon substrate is heavily implanted. The implanting energy is controlled to prevent ions from penetrating the shield layer at the sidewall region of the gate electrode. After removing the shield layer, the silicon substrate is processed with lightly implantation. In this way, a MOS transistor with LDD is formed with less manufacturing steps.
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