摘要 |
The invention relates to new improvements in a process for crystal growth in the environment of supercritical ammonia-containing solution, which are based on use of specific azide mineralizers and result in the improved bulk Group XIII element nitride monocrystals, in particular balk monocrystalline gallium-containing nitride, intended mainly for variety of nitride-based semiconductor products such as various opto-electronic devices. The invention further relates to a mineralizer used for supercritical ammonia-containing solution which comprises at least one compound selected from the group consisting of LiN3, NaN3, KN3, and CsN3. |
申请人 |
AMMONO SP. Z O.O.;NICHIA CORPORATION;DWILINSKI, ROBERT;DORADZINSKI, ROMAN;GARCZYNSKI, JERZY;SIERZPUTOWSKI, LESZEK, P.;KANBARA, YASUO |
发明人 |
DWILINSKI, ROBERT;DORADZINSKI, ROMAN;GARCZYNSKI, JERZY;SIERZPUTOWSKI, LESZEK, P.;KANBARA, YASUO |