| 摘要 |
1,176,119. Semi-conductor devices. COMPAGNIE GENERALE D'ELECTRICITE. 23 May, 1968 [24 May, 1967], No. 24780/68. Heading H1K. A method of increasing the breakdown voltage between the electrodes 11, 12 of a semiconductor element 13, where the electrodes are separated by a thin insulation 14, is to apply a thicker insulation 15 over and completely covering the outside surface of the thin insulation and the projecting rims 11a, 12a of the electrodes. The insulation 14 may be of ceramics or epoxy resin and the outer insulation 15, which may have a corrugated outer surface, Fig. 2, (not shown), may be of the same material as insulation 14 or of a polymerized elastomer. The outer surface of insulation 14 may be roughened prior to the application of insulation 15 to facilitate adherence. |
