| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method by which various problems caused by a mask layer used can be avoided, the manufacturing process of a semiconductor substrate can be simplified, and the conventional problem about the difficulty of the selective growth of AlGaN can be solved and, at the same time, the occurrence of warping and cracking can be suppressed when an Si substrate etc., is used. <P>SOLUTION: In the figure, 1 and 2 respectively represent a substrate and a semiconductor crystal grown by the vapor growth method. Protrusions 11 and recesses 12 are formed on the crystal growth surface of the substrate 1 so that crystal growth may be made only from the upside of the protrusions 11. The widths (a) of the projecting sections 11 are controlled to a submicron order of 0<a<1 μm and the ratio of the area occupied by the protrusions 11 to the whole surface of the substrate 1 is adjusted to ≤50 %. <P>COPYRIGHT: (C)2004,JPO |
