METHOD OF FORMING ZINC OXIDE SEMICONDUCTOR LAYER, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide methods of forming a ZnO semiconductor layer with excellent crystallinity and manufacturing a semiconductor device having the ZnO semiconductor layer with excellent crystallinity at low cost.

SOLUTION: A sputtering method is used to form a ZnO buffer layer 2 with conductivity of ≤1×10-10S/cm or a ZnO buffer layer 2 having a peak (e.g. (103) or (112)) other than (002) and (004) at a diffraction peak of a crystal surface by an X-ray diffracting method on a substrate 1 and then form a ZnO semiconductor layer 3 on the ZnO buffer layer 2. Here, the ZnO semiconductor layer 3 is formed in such a manner that the oxygen gas flow rate in a sputter gas is smaller than that during the formation of the ZnO buffer layer 2.

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