| 摘要 |
PROBLEM TO BE SOLVED: To provide an element indicating low impedance property even in a high frequency band where decoupling characteristics are deteriorated in a capacitor conventionally used as a decoupling element, and to provide a semiconductor equipped with the element. SOLUTION: This line is provided with a semiconductor substrate 3, a dielectric film 2 formed on the semiconductor substrate 3, and wiring 1 formed on the dielectric film 2, and the line is configured of the semiconductor substrate 3 and the dielectric film 2 and the wiring 1. A wiring capacity between the semiconductor substrate 3 and the wiring 1 of the line is set so that transmissivity((B/A)×100) being the rate of strength (A) of electromagnetic waves incident to the line to strength (B) of electromagnetic waves transmitted through the line can be almost "0" in general in the frequency band of the electromagnetic waves which a high frequency generating source generates. COPYRIGHT: (C)2004,JPO |
