发明名称 INSPECTION METHOD AND INSPECTION DEVICE FOR SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method for predicting deterioration of a semiconductor device in a short period of time and and a method for predicting deterioration of a semiconductor device with high accuracy by finding a correlation between deterioration prediction of an actual semiconductor device and a DC (Direct Current) stress test method for a simple body TEG (Test Element Group). SOLUTION: An AC (Alternating Current) stress test assuming CMOS (Complementary Metal Oxide Semiconductor) operation and an AC stress test using a ring oscillator (R. O.) are performed between the DC stress test method of the simple body TEG and an aging test method. Deterioration of the semiconductor device can be predicted with high accuracy by separating off-stress and on-stress in the AC stress test assuming the CMOS operation. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004004049(A) 申请公布日期 2004.01.08
申请号 JP20030115611 申请日期 2003.04.21
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 ASANO ETSUKO;HAYAKAWA MASAHIKO;IKEDA YOSHIKO
分类号 G01R31/26;H01L21/66;(IPC1-7):G01R31/26 主分类号 G01R31/26
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