发明名称 FILM DEPOSITION METHOD AND FILM DEPOSITION SYSTEM
摘要 PROBLEM TO BE SOLVED: To provide a film deposition method and a film deposition system which hardly exert effect upon the environment, and realize a low cost and a high yield. SOLUTION: A reflection film is deposited on an object for film deposition in a treatment chamber by sputtering. Thereafter, gaseous oxygen, nitrogen or halogen is fed to the same treatment chamber from a reaction gas feeding apparatus. The surface of the reflection film is then exposed to the gaseous oxygen, nitrogen or halogen, so that an oxide film, a nitride film or a halogenated film of the reflection film material is deposited on the surface of the reflection film. Reactive sputtering can be carried out by performing sputtering together with the feed of the gas from the reaction gas feeding apparatus. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004002937(A) 申请公布日期 2004.01.08
申请号 JP20020160811 申请日期 2002.05.31
申请人 SHIBAURA MECHATRONICS CORP 发明人 UTSUNOMIYA NOBUAKI
分类号 C23C14/06;C23C14/34;(IPC1-7):C23C14/06 主分类号 C23C14/06
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