| 摘要 |
PROBLEM TO BE SOLVED: To manufacture good quality silicon carbide bulk single crystal having no micro-pipe defect and a small number of lattice defects at a melt temperature of≤2000°C and at a high growth rate. SOLUTION: The single crystal is allowed to grow on a seed crystal substrate from a melt of an alloy which contains Si, C and M (M is one side of Mn or Ti) and has the following atomic ratio (x) of Si and M expressed by a formula Si<SB>1-x</SB>M<SB>x</SB>; wherein, 0.1≤x≤0.7 when M is Mn and 0.1≤x≤0.25 when M is Ti. C is preferably supplied by the melting from a graphite crucible storing the melt so that the melt does not contain unmelted C. The crystal growth is performed by cooling the melt after immersing the seed crystal substrate into the melt or by immersing the seed crystal substrate in the lower temperature part by having a temperature gradient in the melt. COPYRIGHT: (C)2004,JPO
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