发明名称 |
A METHOD OF FORMING A SILICON DIOXIDE LAYER ON A CURVED SILICON SURFACE |
摘要 |
The present invention refers to a method of forming a silicon dioxide layer by thermally oxidizing at least one monocrystalline silicon surface region on a semiconductor substrate, said silicon surface region having a curved surface. The present invention is advantageously applicable for the formation of the collar region in the upper part of the trench of a DRAM (Dynamic Random Acess Memory) cell. The method comprises the steps of providing a semiconductor substrate (1) having at least one monocrystalline silicon surface region having a curved surface, roughening the surface of said at least one monocrystalline silicon surface region so as to produce a layer of porous silicon, and thermally oxidizing (9) said at least one roughened monocrystalline silicon surface. |
申请公布号 |
WO03036709(A3) |
申请公布日期 |
2004.01.08 |
申请号 |
WO2002EP11689 |
申请日期 |
2002.10.18 |
申请人 |
INFINEON TECHNOLOGIES AG;BIRNER, ALBERT;GOLDBACH, MATTHIAS;SPERL, IRENE |
发明人 |
BIRNER, ALBERT;GOLDBACH, MATTHIAS;SPERL, IRENE |
分类号 |
H01L21/3063;H01L21/316;H01L21/8242;H01L27/108 |
主分类号 |
H01L21/3063 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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