发明名称 Circuit for generating trim bit signal in a flash memory device
摘要 Disclosed is a circuit for generating a trim bit signal in a flash memory device. The circuit comprises a control unit selected by a trim bit select signal and including a programmable and erasable cell, and an output unit for outputting a High level signal or a Low level signal through the trim bit signal output terminal depending on the program cell of the control unit. Thus, as important parameters could be controlled that decide the characteristics of the chip even after the package, the characteristics of the chip could be improved and the productivity could be thus improved.
申请公布号 US2004004874(A1) 申请公布日期 2004.01.08
申请号 US20030462717 申请日期 2003.06.17
申请人 JEONG JONG BAE;PARK IN SUN 发明人 JEONG JONG BAE;PARK IN SUN
分类号 G11C16/06;G11C16/02;G11C16/10;G11C16/20;G11C16/26;G11C29/00;(IPC1-7):G11C7/00 主分类号 G11C16/06
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