METHOD OF DEFINING THE DIMENSIONS OF CIRCUIT ELEMENTS BY USING SPACER DEPOSITION TECHNIQUES

摘要

By using conventional spacer and etch techniques, microstructure elements, such as lines and contact openings of integrated circuits, may be formed with dimensions that are mainly determined by the layer thickness of the spacer layer. In a sacrificial layer 309, an opening is formed by means of standard lithography and etch techniques and, subsequently, a spacer layer 312 is conformally deposited, wherein a thickness of the spacer layer 312 at the sidewalls of the opening substantially determines the effective width of the microstructure element to be formed. By using standard 193 rim lithography and etch processes, gate electrodes of 50 nm and beyond can be obtained without significant changes in standard process recipes.