PIEZO-ELECTRIC ELEMENT USING SUPER-HIGH ORIENTED ALUMINUM NITRIDE THIN FILM, AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a piezo-electric element of high performance which is free from hillocks and cracks, and peeling by forming a lower electrode in a W layer without interposing an adhesion layer on an inexpensive substrate such as a glass substrate, and wherein an aluminum nitride thin film is formed by super-high orienting in a c-axis. SOLUTION: The piezo-electric element has a laminated structure wherein a lower electrode, a piezoelectric thin film and an upper electrode are formed one by one on a substrate and which is free from hillocks and cracks, and peeling. The piezoelectric element uses a super-high oriented aluminum nitride thin film wherein the lower electrode is formed of an oriented W layer whose (111) surface of W is parallel to a substrate surface, and the piezoelectric thin film is formed of a c-axis oriented aluminum nitride thin film whose rocking curve half value width (RCFWHM) is 2.5°or less. COPYRIGHT: (C)2004,JPO