| 发明名称 |
METHOD FOR MANUFACTURING III NITRIDE FILM, SUBSTRATE FOR EPITAXIAL GROWTH, III NITRIDE FILM, EPITAXIAL SUBSTRATE FOR III NITRIDE ELEMENT, AND III NITRIDE ELEMENT |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To form an Al-including III nitride film with high crystalline quality on a prescribed single crystal substrate. <P>SOLUTION: An acicular structure is formed of AlN on a main surface of the prescribed single crystal substrate. Then, the Al-including III nitride film is formed on the main surface of the single crystal substrate via the acicular structure. <P>COPYRIGHT: (C)2004,JPO |
| 申请公布号 |
JP2004006587(A) |
申请公布日期 |
2004.01.08 |
| 申请号 |
JP20020257864 |
申请日期 |
2002.09.03 |
| 申请人 |
NGK INSULATORS LTD |
发明人 |
SHIBATA TOMOHIKO;SUMIYA SHIGEAKI;TANAKA MITSUHIRO |
| 分类号 |
C30B29/38;C23C16/02;C23C16/34;C30B25/02;C30B25/18;H01L21/20;H01L21/205;H01L33/12;H01L33/32 |
主分类号 |
C30B29/38 |
| 代理机构 |
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代理人 |
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