发明名称 TRANSISTOR ARRAY AND ACTIVE MATRIX SUBSTRATE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a transistor array wherein a plurality of transistors are laid out on a substrate made of plastic or the like without causing misalignment, and to provide an active matrix substrate. <P>SOLUTION: The transistor array is provided with a plurality of conductor lines 8 each having a center line and a conductive layer provided on the surface of the center line; a plurality of function lines 7 each of which has a center line at least the surface of which is conductive, an insulation layer provided on the surface of the center line, a semiconductor layer provided on the surface of the insulation layer, and which are in crossing with each other in a manner of being in contact with a plurality of the conductor lines; and a plurality of the transistors 21. Each transistor 21 includes a first ohmic contact region 115 and a second ohmic contact region 119 formed in a region demarcated by crossing of each conductive line 8 and each function line 7, and a channel region demarcated by the first ohmic contact region 115 and the second ohmic contact region 119 in the semiconductor layer. <P>COPYRIGHT: (C)2004,JPO</p>
申请公布号 JP2004006719(A) 申请公布日期 2004.01.08
申请号 JP20030075448 申请日期 2003.03.19
申请人 SHARP CORP 发明人 NISHIKI HIROHIKO;KOBAYASHI KAZUKI
分类号 G02F1/1368;H01L29/417;H01L29/786;H01L51/50;H05B33/14;(IPC1-7):H01L29/786;G02F1/136 主分类号 G02F1/1368
代理机构 代理人
主权项
地址