| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that the insulation breakage of a capacitor occurs in a step between a low layer electrode 6 and an insulating film 3 in an MIM capacitor and the yield deterioration of a high frequency integrated circuit is caused from the low layer electrode 6 etched in a formation process, in which the low layer electrode 6 is formed on the upper part of a first insulating film 2 and a via hole 9 is provided. SOLUTION: A first insulating film 2 and a second insulating film 3 are laminated directly under the capacitor, and the second insulating film 3 is processed into a concave where the low layer electrode 6 is formed. At this time, the thickness of the second insulating film 3 and that of the low layer electrode 6 are equalized so as to eliminate the step between surfaces thereof. When etching a semi-insulating substrate 1 in the formation process for the via hole 9, etching is performed in condition that the etching for the first insulating film 2 is hard to be performed. The etching is interrupted at a step when the first insulating film 2 is disclosed and then the etching condition is changed and thereafter the first insulating film 2 is etched. COPYRIGHT: (C)2004,JPO
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