PLASMA PROCESSING METHOD AND APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a plasma processing method and an apparatus for processing a wafers with excellent reproducibility by suppressing variation in processing size of each wafer without reducing the throughput. SOLUTION: A wafer 32 is processed with a plasma by generating the plasma within a vacuum processing chamber 20 and applying a high frequency voltage to a lower electrode 27 where the wafer is located, periodically performing the ON/OFF modulation of the high frequency voltage applied to the lower electrode 27, and controlling the duty ratio of the ON/OFF conditions of the high frequency voltage for each wafer or every group of a plurality of wafers to be processed. COPYRIGHT: (C)2004,JPO