| 摘要 |
PROBLEM TO BE SOLVED: To provide a method by which a capacitor structure for suppressing the accumulation of electric charges in an upper electrode film that causes the electrostatic damage of the insulating film of an MIM capacitor structure can be manufactured, and to provide a method of manufacturing a capacitor element with a low defect rate. SOLUTION: After an AlCu film (lower electrode film) 21 is formed on a substrate 10 on which an integrated circuit is formed, an SiON film (insulating film) 22 is formed on the AlCu film 21 except the peripheral area of the film 21. Then, the MIM capacitor structure is manufactured by causing a TiN film (upper electrode film) 23 to deposit on the SiON film 22 and an area connecting the surface of the film 22 to that of the AlCu film 21 by bringing a grounded clamp ring 31 into contact with the peripheral area 21a of the AlCu film 21. At the time of manufacturing the TiN film 23, electrons 41 coming to the film 23 are not accumulated in the film 23, because the electrons 41 flow to the ground through the TiN film 23, AlCu film 21, and clamp ring 31. COPYRIGHT: (C)2004,JPO
|
