| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to be capable of increasing the capacitance of the capacitor by using a curved tungsten silicide layer as a storage node. CONSTITUTION: After forming a conductive plug(5) at the upper portion of a semiconductor substrate(1), a cap oxide layer(7) is formed at the upper portion of the resultant structure. At this time, an opening portion is formed at the cap oxide layer for exposing the conductive plug. After forming a tungsten silicide layer(10a) on the entire surface of the resultant structure, grains are grown at the surface of the tungsten silicide layer by carrying out a heat treatment. Then, a storage node is formed by carrying out a wet etching process at the tungsten silicide layer. A dielectric layer and a plate electrode are formed at the upper portion of the resultant structure.
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