发明名称 PLATEN APPARATUS FOR CHEMICAL MECHANICAL POLISHING PROCESS
摘要 PURPOSE: A platen apparatus for a CMP(Chemical Mechanical Polishing) process is provided to be capable of preventing chemicals from being mixed with each other and remaining at the inner portion of a platen by improving the structure of the platen apparatus. CONSTITUTION: A platen apparatus for a CMP process is provided with a source supply line for transmitting the chemicals supplied through a pump and a main chemical supply line(6) for transmitting the chemicals transmitted from the source supply line to the inner portion of a platen(5). The platen apparatus further includes a plurality of sub-chemical supply lines(7) for exhausting the chemicals supplied through the main chemical supply line connected to the inner portion of the platen, to the outside of the platen through a plurality of chemical supply holes.
申请公布号 KR20040001508(A) 申请公布日期 2004.01.07
申请号 KR20020036726 申请日期 2002.06.28
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LEE, SE YEONG
分类号 H01L21/304;(IPC1-7):H01L21/304 主分类号 H01L21/304
代理机构 代理人
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