METHOD FOR FORMING INTERLAYER DIELECTRIC OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming an interlayer dielectric of a semiconductor device is provided to prevent voids and exposure of a metal interconnection by forming a hard mask on the metal interconnection. CONSTITUTION: A metal interconnection substance is formed on a semiconductor substrate(300). A hard mask(330) is formed on the metal interconnection substance. A metal interconnection(320) is then formed by patterning the metal interconnection substance using the hard mask(330). A gap-fill insulating layer(362) is filled between the metal interconnections. After planarizing the gap-fill insulating layer(362), a cap insulating layer is then formed on the resultant structure.