| 摘要 |
A gas shower unit (1) has a function of preliminary heating reactant gas to be passed therethrough, and is thus capable of causing uniform reaction within a semiconductor manufacturing apparatus and preventing through hole clogging and particle generation. The gas shower unit (1) has a base material of 5 mm or less in thickness and includes a sintered aluminum nitride base material (10) having a plurality of through holes (11) and a heater circuit pattern (12) or a plasma upper electrode (14) as a conductive layer formed in the sintered aluminum nitride base material (10). <IMAGE>
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