| 摘要 |
PURPOSE: A method for forming a salicide blocking layer of a semiconductor device is provided to be capable of preventing carbon atoms of an O3 USG layer from diffusing to a substrate by using a nitride layer. CONSTITUTION: A plurality of polysilicon gates(3) are formed at the upper portion of a silicon substrate(1), wherein the silicon substrate includes a plurality of isolation layers(2). A source/drain region(6) is formed at the predetermined inner portions of the silicon substrate by implanting heavily doped dopants into the resultant structure. A nitride layer(4) is formed on the entire surface of the resultant structure by carrying out an N2 or N2O plasma process. After forming an O3 USG layer on the entire surface of the nitride layer by carrying out an APCVD(Atmosphere Pressure Chemical Vapor Deposition) or SACVD(Semi-Atmosphere Chemical Vapor Deposition) process using TEOS(TetraEthylOrthoSilicate) gas and O3 as a catalyst. Then, a salicide blocking layer(5) is formed at the I/O pad portion of the silicon substrate by selectively patterning the O3 USG layer.
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